B jayant baliga biography of barack obama

          Bantval Jayant Baliga (born ()28 April in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices..

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          President Barack Obama has awarded the National Medal of Technology and Innovation to North Carolina State University professor Dr. B. Jayant Baliga.

        1. B.
        2. Bantval Jayant Baliga (born ()28 April in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices.
        3. Baliga is an internationally recognized expert on power semiconductor devices.
        4. He was honored with the National Medal of Technology and Innovation by President Obama in , the IEEE Medal of Honor in , the Global Energy Prize in

          5. Jayant Baliga

          Indian electrical engineer

          Bantval Jayant Baliga (born (1948-04-28)28 April 1948 in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT).[1][2]

          In 1993, Baliga was elected as a member into the National Academy of Engineering for contributions to power semiconductor devices leading to the advent of smart power technology, and in 2024, won the Finnish Millennium Technology Prize for his invention of the IGBT.[3][4]

          Early life and education

          Baliga grew up in Jalahalli, a small village near Bangalore, India.

          His father, Jayant studied at Bishop Cotton Boys' School, Bangalore. He received his B.Tech in Electrical Engineering from the Indian Institute of Technology, Madras in 1969, and his MS (1971) and PhD (1974) in Electrical Engineering from the Rensselaer Polytechnic Institute.[1] Bantw